af139 GE-P 15V 10mA 60mW

Type Designator: AF139

Material of Transistor: Ge

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.06 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 15 V

Maximum Collector Current |Ic max|: 0.01 A

Max. Operating Junction Temperature (Tj): 75 °C

Transition Frequency (ft): 275 MHz

Collector Capacitance (Cc): 0.3 pF

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: TO72